Development of ZnO:Ga as an ultra-fast scintillator
网页2009年4月1日 · We report on several methods for synthesizing the ultra-fast scintillator ZnO(Ga), and measurements of the resulting products. This material has characteristics that make it an excellent alpha detector for tagging the time and direction of individual neutrons produced by t–d and d–d neutron generators (associated particle imaging).
Performance of different Ga-doped ZnO nanosheets ultraviolet
网页3 天之前 · High-performance and low-cost ultraviolet (UV) photodetector has always been the desired goals. In this work, Ga-doped ZnO (ZnO:Ga) nanosheets with different Ga doping concentrations from 0 to 6 mol% were synthesized by a hydrothermal method. Furthermore, six ZnO:Ga nanosheets UV photodetectors were fabricated by using the resulting ZnO:Ga nanosheets as the photosensitive layers, their UV ...
Crystals | Free Full-Text | Magnetron Sputtering for ZnO:Ga ... - MDPI
网页2019年5月20日 · The ZnO:Ga has an extremely fast time response, high light yield, strong irradiation resistance, and low deliquescence. Its scintillation performance can basically meet the demand for ultrafast scintillation crystals .
Transient Radiation Imaging Based on a ZnO:Ga Single-Crystal …
网页2018年3月8日 · The results demonstrate that the large ZnO:Ga single crystal can diagnose the spatial distribution of cathode electron emission in an intense current diode with high temporal resolution and ...
Development of the ZnO:Ga nanorod arrays as an alpha particle ...
网页2022年5月12日 · Herein, the highly uniform and densely packed ZnO:Ga nanorod arrays, as designed alpha particle scintillation screen for the APNG, is proposed and prepared on a ZnO-seeded substrate by a radio frequency magnetron sputtering and hydrothermal method.
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ZnO:Ga - arXiv.org
网页report observation of the RT NBE luminescence from ZnO:Ga epitaxial layers. The radiative efficiency, threshold energy and the linewidth of the near-band-gap optical transition are investigated as a function of doping density of Ga. Ga-doped ZnO samples were grown by laser molecular-beam epitaxy on the (0001)-plane of a ScAlMgO4 substrate. The
网页Abstract: To improve the radioluminescence (RL) performance of ZnO:Ga (GZO) crystal scintillators and overcome the challenge of their self-absorption, we proposed a two-layer composite scintillator consisting of a GZO wafer and a 70 nm lead halide perovskite film(CsPbBr3, CH3NH3PbBr3).
Gas sensing response of ion beam irradiated Ga-doped ZnO thin …
网页2022年12月26日 · The Ag9+ ion irradiated Ga-doped ZnO thin was optimized at different operating temperature. It was observed that gas sensing response for both ethanol and acetone gas increases with increasing...
Ultrafast luminescence of Ga- and In-doped ZnO ceramics
网页2021年12月1日 · Doping of ZnO with Ga and In ions significantly accelerates the scintillation decay. • Indium doping results in higher total transmittance than gallium doping. • Introduction of Ga leads to much stronger near-band-edge luminescence band. • ZnO:Ga ceramics made of precipitated powders are applicable at a small thickness.
Highly conductive and transparent gallium doped zinc oxide …
网页2020年1月20日 · Zinc oxide (ZnO) is a large bandgap semiconducting material with optoelectronic properties that is often used as a transparent conducting oxide (TCO) electrode in photovoltaic...