In the new work, the researchers first designed an EDC cavity in the III-V semiconductor indium phosphide (InP) using a systematic mathematical approach that optimized the topology while relaxing ...

In a study appearing in PRX Energy, researchers propose a way to improve the performance of electroluminescent cooling by ...

This research conducted a theoretical analysis on cooling power density and coefficient of performance. The research used a case study featuring a double-junction structure with gallium arsenide and ...

The semiconductor laser has revolutionized ... In the late 1970s, indium gallium arsenide phosphide (InGaAsP) lasers operating at longer wavelengths were demonstrated, enabling systems to transmit ...

Researchers developed a new III-V semiconductor nanocavity that confines light at levels below the diffraction limit. The design of the cavity is shown in a, the calculated electric field ...

The research used a case study featuring a double-junction structure with gallium arsenide and indium phosphide semiconductor materials. The system consisted of multiple semiconductor layers with ...

Stanford University researchers conducted a theoretical analysis of the cooling power density and coefficient of performance ...

Semiconductor nanoparticles typically consist of a crystalline core made from a semiconductor material, such as cadmium selenide (CdSe), cadmium sulfide (CdS), or indium phosphide (InP). The core is ...

Princeton Lightwave (PLI) applies its unique expertise in indium phosphide-based optical semiconductor devices, such as SWIR InGaAs focal plane arrays (FPA), high power lasers and avalanche ...