Indium gallium arsenide phosphide is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide, indium arsenide, or indium phosphide. This compound has applications ...

Stanford University researchers conducted a theoretical analysis of the cooling power density and coefficient of performance ...

In a study appearing in PRX Energy, researchers propose a way to improve the performance of electroluminescent cooling by ...

The research used a case study featuring a double-junction structure with gallium arsenide and indium phosphide semiconductor materials. The system consisted of multiple semiconductor layers with ...

Theorists propose a new approach to electroluminescent cooling that works like inverted solar photovoltaic cells.

The expansion will establish the first 150mm indium phosphide manufacturing line ... preparing students for the growing demand in the semiconductor industry. “The class’s design is a stepping ...