Reliability benefits from deploying deposited gate oxides in SiC MOSFETs. BY ARNE BENJAMIN RENZ, PETER GAMMON, OLIVER VAVASOUR, VISHAL SHAH AND MARC WALKER FROM THE UNIVERSITY OF WARWICK, SUPPORTED BY ...
Our electrified world contains countless examples of energy conversion. Within this sector the GaN-based power device attracts extensive attention, thanks to its capability to switch high voltages at ...
These advanced semiconductor devices offer superior device performance compared to conventional silicon-based devices. SiC as a material has a 3x wider bandgap, 10x higher breakdown voltage and a 5x ...