Indium gallium arsenide phosphide is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide, indium arsenide, or indium phosphide. This compound has applications ...

Stanford University researchers conducted a theoretical analysis of the cooling power density and coefficient of performance ...

The research used a case study featuring a double-junction structure with gallium arsenide and indium phosphide semiconductor materials. The system consisted of multiple semiconductor layers with ...

This research conducted a theoretical analysis on cooling power density and coefficient of performance. The research used a case study featuring a double-junction structure with gallium arsenide and ...

The researchers conducted a theoretical analysis of cooling power in electroluminescent cooling systems. They used a case study featuring a double-junction structure with gallium arsenide and indium ...

They used a case study featuring a double-junction structure with gallium arsenide and indium phosphide semiconductor materials. The system consisted of multiple semiconductor layers with ...

Inorganic LEDs are light-emitting diodes (LEDs) made from a crystalline semiconductor ... gallium nitride and indium phosphide. Inorganic LEDS are prized for their low power consumption and ...