Reliability benefits from deploying deposited gate oxides in SiC MOSFETs. BY ARNE BENJAMIN RENZ, PETER GAMMON, OLIVER VAVASOUR, VISHAL SHAH AND MARC WALKER FROM THE UNIVERSITY OF WARWICK, SUPPORTED BY ...

HexaTech, a subsidiary of Japanese firm Stanley Electric, has signed a multi-year contract with the US Defense Advanced ...

Raytheon, an RTX business, has been awarded a three-year, two-phase contract from DARPA to develop ultra-wide bandgap ...

Empower Semiconductor, a maker of integrated voltage regulators (IVRs), has announced Crescendo, a vertical power delivery ...

Our electrified world contains countless examples of energy conversion. Within this sector the GaN-based power device attracts extensive attention, thanks to its capability to switch high voltages at ...

These advanced semiconductor devices offer superior device performance compared to conventional silicon-based devices. SiC as a material has a 3x wider bandgap, 10x higher breakdown voltage and a 5x ...

The compact Ophelia-III radio module is offered as part of Würth Elektronik’s “Build Your Own Firmware” concept. The ...

The US National Renewable Energy Laboratory (NREL) will be redesigning the traction inverter used in US ground combat ...